35-40 GHz monolithic VCO's utilizing high-speed GaInP/GaAs HBT'sRIEPE, K; LEIER, H; MARTEN, A et al.IEEE microwave and guided wave letters. 1994, Vol 4, Num 8, pp 274-276, issn 1051-8207Article

Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-bandBEHTASH, R; TOBLER, H; NEUBURGER, M et al.IEEE MTT-S International Microwave Symposium. 2004, isbn 0-7803-8331-1, vol3, 1657-1659Conference Paper

Intermixed quantum wires with steep lateral confinementLEIER, H; MAILE, B. E; FORCHEL, A et al.Microelectronic engineering. 1990, Vol 11, Num 1-4, pp 43-46, issn 0167-9317Conference Paper

Carrier capture in intermixed quantum wires with sharp lateral confinementLEIER, H; FORCHEL, A; MAILE, B. E et al.Applied physics letters. 1990, Vol 56, Num 1, pp 48-50, issn 0003-6951Article

In_xGa_1-xAs/GaAs pseudomorphic quantum wells - growth and thermal stabilityNICKEL, H; LOÊSCH, R; SCHLAPP, W et al.Surface science. 1990, Vol 228, Num 1-3, pp 340-343, issn 0039-6028Conference Paper

MBE grown AlGaN/GaN MODFETs with high breakdown voltageVESCAN, A; DIETRICH, R; WIESZT, A et al.Journal of crystal growth. 1999, Vol 201202, pp 327-331, issn 0022-0248Conference Paper

High speed selfaligned GaInP/GaAs HBBTsLEIER, H; MARTEN, A; BACHEM, K.-H et al.Electronics Letters. 1993, Vol 29, Num 10, pp 868-870, issn 0013-5194Article

Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAsTRÄNKLE, G; LEIER, H; FORCHEL, A et al.Physical review letters. 1987, Vol 58, Num 4, pp 419-422, issn 0031-9007Article

Heat-spreading diamond films for GaN-based high-power transistor devicesSEELMANN-EGGEBERT, M; MEISEN, P; SCHAUDEL, F et al.Diamond and related materials. 2001, Vol 10, Num 3-7, pp 744-749, issn 0925-9635Conference Paper

High-efficiency GaInP/GaAs HBT MMIC power amplifier with up to 9 W output power at 10 GHzRIEPE, K; LEIER, H; SEILER, U et al.IEEE microwave and guided wave letters. 1996, Vol 6, Num 1, pp 22-24, issn 1051-8207Article

Carrier relaxation in intermixed GaAs/Al_xGa_1-xAs quantum wiresMAYER, G; PRINS, F. E; LEHR, G et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 7, pp 4060-4063, issn 0163-1829Article

Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodesLAMBSDORFF, M; KLINGENSTEIN, M; KUHL, J et al.Applied physics letters. 1991, Vol 58, Num 13, pp 1410-1412, issn 0003-6951Article

Mass and dose dependence of ion-implantation-induced intermixing of GaAs/GaAlAs quantum-well structuresLEIER, H; FORCHEL, A; HOÊRCHER, G et al.Journal of applied physics. 1990, Vol 67, Num 4, pp 1805-1813, issn 0021-8979, 9 p.Article

Optical spectroscopy on one-dimensional compound semiconductor structuresFORCHEL, A; MAILE, B. E; LEIER, H et al.Physica status solidi. B. Basic research. 1990, Vol 159, Num 1, pp 457-470, issn 0370-1972Conference Paper